Semiconductor structure manufacturing methods and semiconductor structures

ABSTRACT

The present invention provides a manufacturing method of a semiconductor structure and a semiconductor structure. The manufacturing method includes: providing a substrate; forming an amorphous layer on the substrate, wherein the amorphous layer includes a plurality of patterns to expose part of the substrate; forming a metal nitride layer on the amorphous layer; removing the amorphous layer to form a plurality of cavities between the substrate and the metal nitride layer; removing the substrate to form the semiconductor structure. In the present invention, an amorphous layer is formed on the substrate, and a metal nitride layer is formed on the amorphous layer. The amorphous layer can inhibit slip or dislocation during epitaxial growth, thereby improving the quality of the metal nitride layer and improving the performance of the semiconductor structure, while the metal nitride layer can realize self-supporting.

TECHNICAL FIELD

This present invention relates to the field of semiconductor, and inparticular, to a method of manufacturing semiconductor structure and asemiconductor structure.

BACKGROUND

GaN, as a wide bandgap semiconductor material, has spread applicationprospects, but manufacturing high-quality GaN epitaxial layers is quitedifficult. For example, when manufacturing a GaN epitaxial layer on acommonly used Si substrate, due to the melting back reaction between Gaand Si substrate at high temperature, the epitaxial layer is destroyed,so a metal nitride layer with a certain thickness such as an AlN layerneeds to be manufactured in advance. However, there is a huge latticemismatch between the AlN layer and the Si substrate, and the surfacemobility of Al atom is low. Therefore, how to obtain high quality AlNepitaxial layer on a Si substrate is very important for the crystalquality of subsequent epitaxial layer.

SUMMARY

A method of manufacturing a high-quality semiconductor structure and asemiconductor structure is provided in the invention.

A manufacturing method of a semiconductor structure is provided in thepresent invention, including: providing a substrate; forming anamorphous layer on the substrate, where the amorphous layer includes aplurality of patterns to expose part of the substrate; forming a metalnitride layer on the amorphous layer; removing the amorphous layer toform a plurality of cavities between the substrate and the metal nitridelayer; removing the substrate to form the semiconductor structure.

Further, forming the metal nitride layer on the amorphous layerincludes: forming a metal nitride film layer on the amorphous layer;converting the polycrystalline film layer of the metal nitride filmlayer into a monocrystalline film layer to form the metal nitride layer;where the metal nitride film layer includes a monocrystalline film layerin contact with the substrate and a polycrystalline film layer incontact with the amorphous layer.

Further, the polycrystalline film layer of the metal nitride film layeris converted into a monocrystalline film layer by annealing process.

Further, the amorphous layer is removed by etching process.

Further, the amorphous layer is separated from substrate and the metalnitride layer in a lateral direction after being etched, the lateraldirection is perpendicular to the arrangement direction of the substrateand the metal nitride layer.

Further, the pattern is a convex pattern, the orthographic projection ofthe pattern on the substrate is a rectangle, triangle, polygon orcircle.

Further, a material of the amorphous layer includes SiO2.

Further, the substrate is a monocrystalline substrate, themonocrystalline substrate is a sapphire substrate, silicon substrate orsilicon carbide substrate.

Further, a material of the metal nitride layer includes a AlN-basedmaterial.

A semiconductor structure is provided in the present invention,including a plurality of main body parts and a plurality of supportparts, where each of the support parts connects two adjacent main bodyparts, and each of the main body parts and the two adjacent supportparts enclose a cavity.

In the present invention, an amorphous layer is formed on the substrate,and a metal nitride layer is formed on the amorphous layer. Theamorphous layer can inhibit slip or dislocation during epitaxial growth,thereby improving the quality of the metal nitride layer and improvingthe performance of the semiconductor structure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic flowchart of a method of manufacturing asemiconductor structure according to an embodiment of the presentinvention.

FIG. 2 is a schematic diagram illustrating forming an amorphous layer ona substrate in the manufacturing method shown in FIG. 1.

FIG. 3 is a schematic diagram illustrating forming a metal nitride layeron an amorphous layer in the manufacturing method shown in FIG. 1.

FIG. 4 is a schematic diagram illustrating a structure after removingthe amorphous layer in the manufacturing method shown in FIG. 1.

FIG. 5 is a schematic diagram illustrating a semiconductor structuremanufactured by the manufacturing method shown in FIG. 1.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Exemplary embodiments will be described in detail herein, and examplesthereof are shown in the accompanying drawings. When the followingdescription refers to the drawings, unless otherwise indicated, the samenumerals in different drawings indicate the same or similar elements.The exemplary embodiments described in the following do not representall the embodiments consistent with the present invention. On thecontrary, they are merely examples of devices consistent with someaspects of the invention as detailed in the appended claims.

The terms used in the present invention are only for the purpose ofdescribing specific embodiments, and are not intended to limit thepresent invention. Unless otherwise defined, the technical terms orscientific terms used in the present invention shall have the usualmeanings understood by those with ordinary skills in the field to whichthe present invention belongs. The “first”, “second” and similar wordsused in the description and claims of the present invention do notdenote any sequence, quantity or importance, but are only used todistinguish different components. Similarly, similar words such as “a”or “an” do not mean a quantity limit, but mean that there is at leastone, and “multiple” or “a plurality of” means two or more. Unlessotherwise indicated, similar words such as “front”, “rear”, “lower”and/or “upper” are only for convenience of describing, and are notlimited to one position or one spatial orientation. “Include” or“comprise” and other similar words mean that the components or itemspresented before “include” or “comprise” cover the components or itemslisted after “include” or “comprise” and their equivalents, and do notexclude other components or items. Similar words such as “connect” or“couple” are not limited to physical or mechanical connections, and mayinclude electrical connections, whether direct or indirect. The singularforms of “a/an”, “said” and “the” used in the description and appendedclaims of the present invention are also intended to include pluralforms, unless the context clearly indicates other meanings. It shouldalso be understood that the term “and/or” as used herein refers to andincludes any or all possible combinations of one or more associatedlisted items.

The present invention provides a manufacturing method of a semiconductorstructure, including: providing a substrate; forming an amorphous layeron the substrate, where the amorphous layer includes a plurality ofpatterns; forming a metal nitride layer on the amorphous layer; removingthe amorphous layer to form a plurality of cavities between thesubstrate and the metal nitride layer.

Please refer to FIGS. 1 to 5, a manufacturing method of semiconductorstructure is provided in the embodiment, the manufacturing methodincluding:

Step S10: a substrate 1 is provided.

Step S20: an amorphous layer 2 is formed on the substrate, where theamorphous layer includes a plurality of patterns 21 to expose a part ofthe substrate.

Step S30: a metal nitride layer 3 is formed on the amorphous layer 2.

Step S40: the amorphous layer 2 is removed to form a plurality ofcavities between the substrate 1 and the metal nitride layer 3, thecavities 30 corresponding to the space occupied by the patterns 21 instep S20.

Step S50: the substrate 1 is removed.

Optionally, the step S20 includes: firstly, an amorphous film layer isformed on the substrate 1, and then the amorphous film layer ispatterned to form the patterns 21, and to form a channel 22 betweenadjacent patterns 21. The patterning process is, for example, aphotolithography process. The projection of the pattern 21 on thesubstrate 1 may be a rectangle, a triangle, a polygon (which can beunderstood as a pentagon or a closed pattern with more sides) or acircle. The pattern 21 can inhibit slip or dislocation of the metalnitride layer 3 during growth, thereby reducing the dislocation density,further improving the quality of the metal nitride layer 3. In thisembodiment, the pattern 21 is a convex pattern, that is, the pattern 21is formed by extending upward; in other embodiments, a plurality ofupward notches is formed on the substrate 1, and the pattern 21 isformed in the notch. At this time, the pattern 21 is a concave pattern.

Optionally, the step S30 includes: a metal nitride film layer is formedon the amorphous layer 2, where for the metal nitride film layer, a partin direct contact with the substrate 1 (that is, located in the channel22) is a monocrystalline film layer, and a part in direct contact withthe amorphous layer 2 is a polycrystalline film layer; thepolycrystalline film layer of the metal nitride film layer is convertedinto a monocrystalline film layer to form the metal nitride layer. As apart of the metal nitride film layer is single crystal, the singlecrystal structure can be conducted to the polycrystalline structure partthrough the annealing process, so that the polycrystalline structuregradually becomes the single crystal structure, that is, finally, themetal nitride film layer completely becomes a single crystal structure.Through the patterned amorphous layer 2 and the annealing process, ahigh-quality single crystal metal nitride film can be obtained.

Optionally, in the step S40, the amorphous layer 2 is removed by anetching process, and the amorphous layer 2 is detached/separated fromthe substrate 1 and the metal nitride layer 3 in the lateral directionafter being etched, thus the metal nitride layer will not be damagedduring the etching process. The lateral direction is perpendicular tothe arrangement direction of the substrate 1 and the metal nitride layer3.

Optionally, in step S50, the substrate 1 is removed by a lift-offtechnology. Since the step removing the substrate 1 is after the stepremoving the amorphous layer 2, when the amorphous layer 2 is removedfrom the substrate 1, the substrate 1 can still support the metalnitride layer 3 well, and prevent the metal nitride layer 3 fromdeformation during this step.

Optionally, the substrate is a single crystal substrate. The singlecrystal substrate can be a sapphire substrate, a silicon substrate or asilicon carbide substrate. The material of the amorphous layer 2includes silicon oxide such as SiO2. The material of the metal nitridelayer 3 includes an AlN-based material. In this embodiment, theAlN-based material is selected. The AlN-based material can be AlN,AlGaN, InAlN, ScAlN, and other materials.

Please refer to FIG. 5, a semiconductor structure (actually a metalnitride layer 3) manufactured by the manufacturing method in any one ofthe previously described embodiments is shown. The semiconductorstructure 3 includes a plurality of main body parts 31 and a pluralityof supporting parts 32. The supporting part 32 connects two adjacentmain body parts. The main body part 31 and the supporting part 32 are atleast partially staggered, to make the main body part 31 and twoadjacent supporting parts 32 enclose a cavity 30. In this embodiment,the cavity 30 is open on one side. FIG. 5 only shows a part of thesemiconductor structure, which results the cavities on both sides beingdifferent from a cavity in the middle, but actually cavities are thesame. The semiconductor structure 3 can be self-supporting. Theself-supporting can be understood as: it can maintain its own shapewithout defects during processing. At the same time, the metal nitridelayer of the semiconductor has a low dislocation density and a highquality, which is beneficial to further manufacturing a high-quality GaNstructure.

In another aspect, a resonator is provided in the present invention,which includes the semiconductor structure in any one of the previouslydescribed embodiments. Generally, the resonator needs to form a cavitystructure in its substrate. However, the semiconductor structuremanufactured by the previously described manufacturing method has aplurality of cavities 30. The cavities 30 can replace cavity structureof the substrate. Therefore, the semiconductor structure can be useddirectly to manufacture the resonator without forming a cavity in thesubstrate of the resonate by other processes, which is beneficial tosimplify the manufacturing process and reduce the manufacturing cost.

In other embodiments, the semiconductor structure can also be used tomake LED chips.

In the present invention, an amorphous layer is formed on the substrate,and a metal nitride layer is formed on the amorphous layer. Theamorphous layer can inhibit slip or dislocation during epitaxial growth,thereby improving the quality of the metal nitride layer and improvingthe performance of the semiconductor structure, while the metal nitridelayer can realize the self-supporting. The semiconductor structure canbe directly used to make the resonator, which is beneficial to simplifythe manufacturing process of the resonator.

The above are only some embodiments of the present invention, and do notlimit the present invention in any form. Although the present inventionhas been disclosed in some embodiments, it is not intended to limit thepresent invention. Without departing from the scope of the technicalsolution of the present invention, slight changes or modification intoequivalent implementations with equivalent changes made by any personskilled in the art when using the technical content disclosed above, butany content that does not depart from the technical solution of thepresent invention and any of simple modifications, equivalent changesand modifications to the above embodiments based on the technicalessence of the invention still fall within the scope of the technicalsolutions of the present invention.

1. A method of manufacturing a semiconductor structure, comprising: providing a substrate; forming an amorphous layer on the substrate, wherein the amorphous layer comprises a plurality of patterns to expose a part of the substrate; forming a metal nitride layer on the amorphous layer; removing the amorphous layer to form a plurality of cavities between the substrate and the metal nitride layer; and removing the substrate to form the semiconductor structure.
 2. The method of manufacturing the semiconductor structure according to claim 1, wherein forming the metal nitride layer on the amorphous layer comprises: forming a metal nitride film layer on the amorphous layer, wherein the metal nitride film layer comprises a monocrystalline film layer in contact with the substrate and a polycrystalline film layer in contact with the amorphous layer; and converting the polycrystalline film layer into the monocrystalline film layer to form the metal nitride layer.
 3. The method of manufacturing the semiconductor structure according to claim 2, wherein the polycrystalline film layer of the metal nitride film layer is converted into a monocrystalline film layer by an annealing process.
 4. The method of manufacturing the semiconductor structure according to claim 1, wherein the amorphous layer is removed by an etching process.
 5. The method of manufacturing a semiconductor structure according to claim 4, wherein the amorphous layer is separated from substrate and the metal nitride layer in a lateral direction after being etched, and the lateral direction is perpendicular to an arrangement direction of the substrate and the metal nitride layer.
 6. The method of manufacturing the semiconductor structure according to claim 1, wherein each of the patterns is a convex pattern, and the orthographic projection of the pattern on the substrate is a rectangle, a triangle, a polygon or a circle.
 7. The method of manufacturing the semiconductor structure according to claim 1, wherein a material of the amorphous layer comprises SiO2.
 8. The method of manufacturing the semiconductor structure according to claim 1, wherein the substrate is a monocrystalline substrate, and the monocrystalline substrate is a sapphire substrate, a silicon substrate or a silicon carbide substrate.
 9. The method of manufacturing the semiconductor structure according to claim 1, wherein a material of the metal nitride layer comprises an AlN-based material.
 10. A semiconductor structure, comprising a plurality of main body parts and a plurality of support parts, wherein each of the support parts connects two adjacent main body parts, and each of the main body parts and two adjacent support parts enclose a cavity.
 11. A resonator, comprising a semiconductor structure, wherein the semiconductor structure comprises: a plurality of main body parts and a plurality of support parts, wherein each of the support parts connects two adjacent main body parts, and each of the main body parts and two adjacent support parts enclose a cavity. 